| Abstrakt: |
In this work, calcium fluoride (CaF2) has been employed as an anti-reflection coating (ARC) for gallium arsenide (GaAs) based heterojunction solar cell. A numerical analysis was carried out to optimize performance parameters such as doping concentration, thickness of absorber and window layer, and carrier lifetime. ZnO and GaAs have been employed as window and absorber layer, respectively. Performance of CaF2 ARC has been investigated at optimum conditions. Personal computer one-dimensional simulator has been used for numerical analysis. Different Materials like magnesium oxide, magnesium fluoride (MgF2), titanium nitrate, aluminum trioxide and silicon dioxide, have been considered to make a comparative analysis. Best power conversion efficiency of 27.4% has been achieved with 32.0 mA short circuit current, 0.9899 V of open circuit voltage, and 86.49% of fill factor at optimum thicknesses of ARC, absorber, and window layers. Results revealed that MgF2 and CaF2 show almost same results as ARC layer but when it comes to stability CaF2 is more appropriate material as ARC layer for ZnO/GaAS solar cell. The results prove that optimization of thickness of materials, doping concentration, and carrier lifetime of absorber and window layer would make the crucial factor to fabricate the cost efficient and highly efficient GaAs solar cell based on CaF2 ARC layer. [ABSTRACT FROM AUTHOR] |
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