Oxygen vacancy induced carrier mobility enhancement in nano-multilayered ZrO2:Y2O3/SrTiO3 thin films for non-volatile memory devices.

Autor: Yang, Ze-ou, Huang, Xiao-zhong, Hu, Hai-long, Ma, Bing-yang, Shang, Hai-long, Yue, Jian-ling
Zdroj: Journal of Central South University; Oct2024, Vol. 31 Issue 10, p3674-3687, 14p
Databáze: Complementary Index