| Autor: |
Xu, Zhonghui, Wei, Kaiyu, Wang, Zhenyu, Jiang, Junlin, Liu, Guogang, Ke, San-Huang |
| Zdroj: |
Physical Chemistry Chemical Physics (PCCP); 12/14/2024, Vol. 26 Issue 46, p28922-28928, 7p |
| Abstrakt: |
Two-dimensional (2D) semiconductors have attracted a great deal of interest from the electrical engineering community due to their intriguing electronic properties. In this study, we have systematically investigated the electronic and optoelectronic properties of β-AsP monolayers by first-principles calculations combined with strain engineering. The results show that the β-AsP monolayer has a suitable indirect bandgap and a strain-tunable electronic structure. On this basis, the designed two-electrode photodetector based on β-AsP monolayer exhibits a strong photoelectric response in the near-ultraviolet region, and the maximum photocurrent can reach 74a02 per phonon under the applied bias voltage of 1 V. In particular, the strain engineering not only improves the photoelectric performance of the β-AsP-based photodetector, but also adjusts its photodetection range. These findings suggest that β-AsP monolayers are ideal candidates for the development of near-ultraviolet photodetectors and optoelectronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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