| Autor: |
Isakhanov, Z. A., Umirzakov, B. E., Nabiev, D. Kh., Imanova, G. T., Bekpulatov, I. R., Khudaykulov, F. Ya., Iskhakova, S. S., Abdiyev, Kh. E. |
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| Zdroj: |
Micro & Nano Systems Letters; 11/22/2024, Vol. 12 Issue 1, p1-7, 7p |
| Abstrakt: |
In this paper, using high-dose implantation of O2+ ions, nano-sized WO3 films were obtained on the surface and at various depths of W(111) for the first time. It has been confirmed that when O2+ ions are implanted into W at room temperature with low energy, partial formation of oxides such as WO, WO2, WO3 and WO4 occurs. It has been proved that in order to obtain a homogeneous and good stoichiometry of W oxide, it is necessary to carry out oxidation at a certain temperature. The optimal modes for obtaining hidden oxide layers in the near-surface region of tungsten, the substrate temperature W, the energy and dose of O2+ ions were determined. The concentration profiles of distributed O atoms in depth were studied for the three-layer W-WO3-W(111) system. Using scanning electron microscopy, the formation depths and thicknesses of WO3 layers were determined. The WO3 films were polycrystalline. The resulting films have potential for creating thin-film OLED displays, as well as nanofilm MOS transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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