| Autor: |
Mohanty, Aradhana, Ahmad, Md Akram, Kumar, Pankaj, Kumar, Raushan |
| Zdroj: |
SILICON (1876990X); Dec2024, Vol. 16 Issue 18, p6305-6312, 8p |
| Abstrakt: |
Many research is underway in the semiconductor industry. Conventional MOSFETs are getting replaced with emerging devices such as junctionless field-effect-transistor (JLTFET) to increase the efficiency and performance of the devices. The incorporation of junctionless mechanism in JLTFET has significantly reduced fabrication complexity because of independency with the pn junction formed at source and drain regions. JLTFET has shown promising electrical behavior with the improvement in the ON-state current, reduction in ambipolar conduction, and reduced short channel effects. The significant enhancement in OFF-state current resulting in improved ION/IOFF drain current ratio which in turn result in comparatively steeper subthreshold slope. In this review paper, the significance of JLTFET has been analysed in terms of its working principle and considering its electrical behavior such as architectural, dielectric, semiconductor material, oxide thickness, gate workfunction, source workfunction engineering and its performance at higher temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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