Temperature Dependencies of the Breakdown Voltage of a High-Voltage SOI LDMOS Transistor.

Autor:	Novoselov, A. S., Gusev, M. R., Masal'skii, N. V.
Předmět:	SILICON-on-insulator technology HOT carriers SERVICE life ELECTRIC fields REST periods
Zdroj:	Russian Microelectronics; Oct2024, Vol. 53 Issue 5, p456-463, 8p
Abstrakt:	The results of a study of the temperature dependencies of the breakdown voltage of high-power SOI nLDMOS transistors with a long drift region with topological standards of 0.5 μm are discussed. Our attention is focused on the influence of the mechanism of generation and passivation of traps at the Si/SiO2 interface in strong electric fields. The dependence of the breakdown voltage in the ambient temperature range from –60 to 300°C is analyzed experimentally and theoretically and the temperature range is defined from 25 to 220°C, where the breakdown voltage is almost constant. The possibility of restoring the breakdown voltage level after a long period of rest is considered, which is a prerequisite for extending the service life of the device. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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