| Autor: |
Larbah, Y., Taibeche, M., Rahal, B., Brahimi, H. |
| Předmět: |
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| Zdroj: |
Journal of Nano- & Electronic Physics; 2024, Vol. 16 Issue 5, p1-5, 5p |
| Abstrakt: |
The Highly transparent and conducting aluminum doped zinc oxide thin films deposited on glass substrate held at 450°C using spray pyrolysis method. The structural analysis by X-rays diffraction showed that the films are of structure wurtzite with a preferential orientation according to the direction (002) for oxide zinc ZnO undoped, on the other that ZnO: Al has a direction (101). The crystallite size was varied from 34 to 36 nm with dopant concentration. The scanning electron microscopy results depicted that the microstructure of ZnO: Al films highly influenced by the aluminum doping. The measures optical showed that ZnO: Al layers have a transmission of about 85% and energy gap of 3.2 eV, 3.4 eV for ZnO:Al and ZnO respectively. The resistivity of the films decreased as increase the dopant concentration and it is 3 × 10−2 Ω cm for 1 at.% Al beyond which it increased. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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