| Autor: |
Sang, Lina, Yuan, Meng, Zhao, Jinshi, Yang, Guangsai, Yun, Frank Fei, Li, Zhi, Wang, Xiaolin |
| Zdroj: |
Journal of Materials Chemistry A; 11/14/2024, Vol. 12 Issue 42, p28892-28898, 7p |
| Abstrakt: |
We fabricated full spectrum V1−xTixSe2 samples (0 ≤ x ≤ 1) and systematically studied their crystal structure and electrical properties and their band structure. Ti was found by X-ray diffraction to substitute for V atoms. Our results show that the electrical properties of V1−xTixSe2 are highly tunable, suggesting a promising application in future electronic devices. In addition, we have observed weak localization in VSe2 and TiSe2 single crystals, and the strength of weak localization can be modulated by the defect density. The charge density wave transition for both pure samples, TiSe2 and VSe2, is significantly suppressed by doping. Band structure calculations on a subset of V1−xTixSe2 compositions are in line with the experimental observations. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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