Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors.

Autor: Kim, Minjae, Lee, Yongsu, Kim, Kyuheon, Pham, Giang-Hoang, Kim, Kiyung, Jun, Jae Hyeon, Lee, Hae-won, Yoon, Seongbeen, Hwang, Hyeon Jun, Sung, Myung Mo, Lee, Byoung Hun
Zdroj: Nanoscale Horizons; Nov2024, Vol. 9 Issue 11, p1990-1998, 9p
Databáze: Complementary Index