Simulation study on single-event burnout of 550 V double RESURF SOI Lateral IGBT.
| Autor: | Zhao, Chongning, Hu, Dongqing, Zheng, Yuechao, Jia, Yunpeng, Zhou, Xintian, Wu, Yu, Tang, Yun |
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| Zdroj: | Journal of Physics: Conference Series; 2024, Vol. 2849 Issue 1, p1-6, 6p |
| Databáze: | Complementary Index |
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