| Autor: |
Mudi, Priyabrata, Khamari, Shailesh K, Khan, S, Zucchetti, Carlo, Bottegoni, Federico, Sharma, T K |
| Předmět: |
|
| Zdroj: |
Journal of Physics D: Applied Physics; 1/6/2025, Vol. 58 Issue 1, p1-11, 11p |
| Abstrakt: |
Full-zone optical spin injection in Al x Ga1− x As alloys is investigated by analyzing the degree of circular polarization (DCP) of luminescence in a quantum well architecture. Aluminium content in AlGaAs barrier layers is varied to explore both the direct- and indirect-bandgap regimes. For all the samples, experimental data are compared with a 30-band k . p model addressing the band structure of the alloy and the optical spin injection over the entire Brillouin zone. We observe circularly polarized luminescence arising from the spin generation either around Γ or the L valley. We interpret the specific shape of the DCP within a framework accounting for smaller electron spin relaxation at the higher k points of the X valley of the AlGaAs barrier layer. Moreover, it is found that the presence of strain plays a vital role in governing the magnitude and shape of the DCP spectra for near band-edge excitation while exciting spin-polarized carriers in the direct-bandgap AlGaAs. We believe that these findings are important for the realization of AlGaAs-based spin-photonic devices aiming at possible applications in quantum technology. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
