Fabrication and investigation of a memristive crossbar array artificial synapses based on electrochemical titanium oxide for neuroelectronics.

Autor: Zhavoronkov, L. G., Avilov, V. I., Polupanov, N. V., Khakhulin, D. A., Smirnov, V. A.
Předmět:
Zdroj: Ferroelectrics; 2024, Vol. 618 Issue 5, p1323-1329, 7p
Abstrakt: The formation of free resistive switching between the low-resistance state (LRS) 100.2 ± 9.1 Ω and the high-resistance state (HRS) 890.3 ± 81.7 Ω was observed during 1000 switching cycles, the ratio of the resistance value of HRS to LRS was 8.9 ± 1.6. The dependence of the increase in the response current during paired pulse facilitation on the number of pulses and the magnitude of the voltage pulses is shown. The results obtained can be used in the development of technological foundations for the formation of high-performance multilevel artificial synapses for elements of neuroelectronics and hardware neural networks. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index