| Autor: |
Jaroshevich, A. S., Tkachenko, V. A., Kvon, Z. D., Kuzmin, N. S., Tkachenko, O. A., Baksheev, D. G., Marchishin, I. V., Bakarov, A. K., Rodyakina, E. E., Antonov, V. A., Popov, V. P., Latyshev, A. V. |
| Zdroj: |
Bulletin of the Russian Academy of Sciences: Physics; Sep2024, Vol. 88 Issue 9, p1505-1512, 8p |
| Abstrakt: |
Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel p-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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