Autor: |
Trofimov, A. A., Denisov, I. A., Grishechkin, M. B., Tsaregorodtcev, D. O., Goncharov, A. E., Gladysheva, K. A., Malygin, V. A., Kosyakova, A. M. |
Zdroj: |
Bulletin of the Russian Academy of Sciences: Physics; Sep2024, Vol. 88 Issue 9, p1496-1500, 5p |
Abstrakt: |
The structural perfection of a HgCdTe epitaxial layer with a minimum number of extended structural defects is ensured by the molecular beam epitaxy method and by the growth on substrates matched to the crystal lattice parameter. CdZnTe (211)B substrates (Orion Association, Moscow, Russia) have a total thickness variation (TTV) of less than 1.5 μm and a surface roughness of Ra = 0.45 nm (rms = 0.58 nm). [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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