| Autor: |
Chen, Dongshun, Zhou, Tianyuan, Zhang, Le, Tian, Wen, Zhang, Xinyuan, Shi, Chaofan, Wang, Hongsen, Zhou, Zihan, Huang, Baojin, Strek, Wieslaw, Chen, Hao |
| Zdroj: |
Applied Physics Letters; 9/30/2024, Vol. 125 Issue 14, p1-7, 7p |
| Abstrakt: |
SrAl2O4:Eu2+, Dy3+ as an excellent persistent phosphor has been widely applied in many fields. However, the high temperature induced thermal failure has always been a bottleneck problem restricting its long-term development. In this study, a simple pre-annealing method was utilized to improve the thermal damage resistance ability of SrAl2O4:Eu2+, Dy3+ persistent phosphors. After annealing at 900 °C, the afterglow duration time of the phosphor pre-annealed at 400 °C reached 233 min, which was twice longer than that of the phosphor without pre-annealing. An extrinsic vacancy defect migration theory at an elevated temperature was proposed to explain the interesting phenomenon. This study introduced a path to enhance the thermal stability of SrAl2O4:Eu2+, Dy3+ persistent phosphors and provided a thought to design persistent luminescence materials with desired thermal stability. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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