| Abstrakt: |
Ta1−xAlxN thin films with 5, 15, and 40 at.% Al addition were co‐deposited by reactive magnetron sputtering and characterized by Rutherford backscattering spectroscopy (RBS), grazing angle X‐ray diffraction (GAXRD), X‐ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), nanohardness, and oxidation tests. GAXRD and XPS analyses showed, regardless of the % Al added, the non‐existence of ternary nitride Ta1−xAlxN, but always as individual binary nitrides, TaN and AlN. Sample TaAlN_15 obtained the highest hardness and H3/E2 values, possibly due to the AlN grains presence, which were efficient in distorting the TaN lattice. All samples failed oxidation tests at 873 K, showing that the Al addition was not efficient in improving this property for tantalum aluminum nitride thin films. [ABSTRACT FROM AUTHOR] |
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