| Autor: |
van Hest, M. F. A. M., Dabney, M. S., Perkins, J. D., Ginley, D. S., Taylor, M. P. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/18/2005, Vol. 87 Issue 3, p032111, 3p, 3 Graphs |
| Abstrakt: |
We report on the effects of titanium doping (0–7 at. %) on the optical and electrical properties of In2O3 using combinatorial deposition and analysis techniques. Maximum mobilities are observed at Ti concentrations of 1.5–2.5 at. % and are >80 cm2/V s in sputtered films. The carrier concentration increased with titanium content to a high of 8.0×1020 cm-3. Data show that one carrier is generated per added Ti between 1 and 3 at. %. Conductivities up to 6260 Ω-1 cm-1 were observed. These remained very high >5000 Ω-1 cm-1 across a wide compositional range. The optical transparency is high (>85%) in a wide spectral range from 400 nm to at least 1750 nm. The work function of titanium-doped indium oxide varies substantially over the studied compositional range. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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