| Autor: |
Slimani, Moulay Ahmed, Benavides-Guerrero, Jaime A., Cloutier, Sylvain G., Izquierdo, Ricardo |
| Předmět: |
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| Zdroj: |
Nanomaterials (2079-4991); Sep2024, Vol. 14 Issue 18, p1508, 12p |
| Abstrakt: |
Wide-bandgap tin oxide ( SnO 2 ) thin-films are frequently used as an electron-transporting layers in perovskite solar cells due to their superior thermal and environmental stabilities. However, its crystallization by conventional thermal methods typically requires high temperatures and long periods of time. These post-processing conditions severely limit the choice of substrates and reduce the large-scale manufacturing capabilities. This work describes the intense-pulsed-light-induced crystallization of SnO 2 thin-films using only 500 μ s of exposure time. The thin-films' properties are investigated using both impedance spectroscopy and photoconductivity characteristic measurements. A Nyquist plot analysis establishes that the process parameters have a significant impact on the electronic and ionic behaviors of the SnO 2 films. Most importantly, we demonstrate that light-induced crystallization yields improved topography and excellent electrical properties through enhanced charge transfer, improved interfacial morphology, and better ohmic contact compared to thermally annealed (TA) SnO 2 films. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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