| Autor: |
Yang, Dongseong, Moon, Yina, Han, Nara, Lee, Minwoo, Beak, Jeongwoo, Song, Geon Chang, Lee, Seung-Hoon, Kim, Dong-Yu |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/28/2024, Vol. 136 Issue 4, p1-9, 9p |
| Abstrakt: |
Carbon nanotubes have shown great promise for high-performance, large-area, solution processable field-effect transistors due to their exceptional charge transport properties. In this study, we utilize the spin-coating method to form networks from selectively sorted semiconducting single-walled carbon nanotubes (s-SWNTs), aiming for scalable electronic device fabrication. The one-dimensional nature of s-SWNTs, however, introduces significant roughness and charge trap sites, hindering charge transport due to the van der Waals gap (∼0.32 nm) between nanotubes. Addressing this, we explored the effects of anion doping on the spin-coated s-SWNT random network, with a focus on the influence of the small size of halogen anions (0.13–0.22 nm) on these electronic properties. Raman and ultraviolet–visible–near-infrared optical spectroscopy results indicate that smaller anions significantly enhance doping effects through strong non-covalent anion–π interactions, improving charge transport and carrier injection efficiency in s-SWNTs, especially for n-type operation. This improvement is inversely proportional to the size of the halogen anions, with the smallest anion (fluorine) effectively transitioning the electrical characteristics of the s-SWNT network from ambipolar to n-type by reducing both junction and contact resistances through anion doping, based on anion–π interaction. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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