| Autor: |
Ni, Hao, Yuan, Yuying, Fu, Qiang, Zhang, Chen, Liu, Lefan, Cheng, Deliang, Sun, Shuyi |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/28/2024, Vol. 136 Issue 4, p1-6, 6p |
| Abstrakt: |
Strain can significantly affect the electronic structure and functional properties of dilute magnetic semiconductors. As a wide bandgap transparent semiconductor, doped In2O3 has also received extensive attention for the modulation of physical properties by lattice strain due to its excellent functional properties. Here, we epitaxially grew the Cr:In2O3 thin film on the (111)-oriented 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) ferroelectric single-crystal substrate. By applying an electric field to PMN–PT, multiple reversible and nonvolatile resistance states can be achieved at room temperature. Utilizing in situ XRD, different strain states corresponding to different resistance states induced by the ferroelastic domain switching of the PMN–PT were characterized. Based on first-principles calculations, the influence of lattice strain on the resistivity of the Cr:In2O3 was discussed. These results offer a route for the design of multiple-valued nonvolatile memory devices and multiple functional magneto-electric devices based on dilute magnetic semiconductors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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