| Autor: |
Afanasjev, P. V., Afanasjev, V. P., Bulat, D. Yu., Pankrashkin, A. V., Pronin, I. P., Suchaneck, G., Gerlach, G. |
| Předmět: |
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| Zdroj: |
Ferroelectrics; 2005, Vol. 318 Issue 1, p35-40, 6p |
| Abstrakt: |
We have .studied (he effect of optical radiation on the conductivity of a thin film field effect transistor based on a Si-SiO2-Pt-PZT-SnO2-x-Pt multilayer structure. Within an admissible radiation dose, the conducting channel possesses a persistent photoconductivity, with an optical data storage time of at least 105 s. Effective channel impedance control by an electric field applied to the thin-film ferroelectric-semiconductor structures is demonstrated. The persistent photoconductivity in the studied multilayer structure may he quenched by only an increase of temperature, for example, using heating by an alternating switching electrical field. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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