| Autor: |
Stepanov, A. L., Nuzhdin, V. I., Valeev, V. F., Rogov, A. M., Konovalov, D. A. |
| Zdroj: |
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Aug2024, Vol. 18 Issue 4, p834-840, 7p |
| Abstrakt: |
The formation of amorphous thin surface layers of nanoporous Ge with various morphologies during the low-energy high-dose implantation by metal ions of different masses, namely 63Cu+, 108Ag+, and 209Bi+, on single-crystal c-Ge substrates was experimentally demonstrated using high-resolution scanning electron microscopy. The structure of the obtained nanoporous Ge layers was studied using backscattered electron diffraction. Under irradiation with low-energy ions, such as 63Cu+ and 108Ag+, needle-like nanostructures constituting a nanoporous thin Ge layer form on the surface of c-Ge. However when employing havier 209Bi+, the implanted layer consists of densely packed nanowires. At high ion-irradiation energies, the morphology of the thin surface layers of nanoporous Ge undergoes a sequential transformation in shape from three-dimensional reticulated to spongy as the mass of the implanted ions increased. Such a spongy structure was formed by sparse individual intertwining nanowires. The general potential mechanisms for pore formation in Ge during low-energy high-dose ion implantation are discussed, including the cluster–vacancy mechanism, local thermal microexplosion, and localized heating accompanied by surface melting with effective sputtering. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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