Wavelike Periodic Structures on the Silicon Surface Initiated by Irradiation with a Focused Gallium Ion Beam.

Autor: Bachurin, V. I., Smirnova, M. A., Lobzov, K. N., Lebedev, M. E., Mazaletsky, L. A., Pukhov, D. E., Churilov, A. B.
Zdroj: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Aug2024, Vol. 18 Issue 4, p822-833, 12p
Abstrakt: We investigate the processes of microrelief formation on a Si(100) surface under irradiation with a Ga+-ion beam with an energy of 30 keV and a fluence of D = 1.25 × 1018–2 × 1019 cm–2 at incident angles of θ = 30°–85°. Within the angular range of θ = 40°–70°, a faceted wavy relief forms on the Si surface, while at θ = 30°, a sinusoidal relief develops. An experimental dependence of the periodic structure wavelength as a function of irradiation time λ(t) ~ t n, where n = 0.33–0.35, is obtained. The average values of relief propagation velocities and their direction relative to the incident ion direction are determined for θ = 30° and 40°, amounting to –5.3 ± 0.6 and –6.3 ± 0.6 nm s–1, respectively. The results are discussed in detail within the framework of existing models of wavelike surface relief formation under ion bombardment. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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