| Abstrakt: |
Diodes with a Schottky barrier based on a PtSi-Si contact can be used as detectors for detecting radiation in the IR region of the spectrum. However, the quantum efficiency of such detectors is very low compared to photodetectors based on narrow-gap semiconductors and p–n junctions. To increase the quantum efficiency, Schottky receivers are manufactured, as will be shown below, in the form of the so-called optical cavity, and the PtSi thickness should not exceed 100 A0. For this purpose, we have developed a technological mode of multilayer metallization for producing thin PtSi-Si contacts. [ABSTRACT FROM AUTHOR] |
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