Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate.

Autor: Zhuravlev, M. N., Egorkin, V. I.
Předmět:
Zdroj: Semiconductors; May2024, Vol. 58 Issue 5, p479-484, 6p
Abstrakt: Various types of p-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index