Autor: |
Zhuravlev, M. N., Egorkin, V. I. |
Předmět: |
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Zdroj: |
Semiconductors; May2024, Vol. 58 Issue 5, p479-484, 6p |
Abstrakt: |
Various types of p-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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