| Autor: |
Smirnov, M. B., Grigorieva, N. R., Pankin, D. V., Roginskii, E. M., Savin, A. V. |
| Předmět: |
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| Zdroj: |
Semiconductors; May2024, Vol. 58 Issue 5, p457-463, 7p |
| Abstrakt: |
A study was carried out of the dielectric properties of planar Si/SiO2 heterostructures, which play an important role in modern electronics. Using the model of dielectric continuum, the spectra of polar phonons in Si/SiO2 binary superlattices have been studied. Quartz and cristobalite lattices are considered as a structural model of the oxide layer. The dependences of polar optical phonons frequencies and the high-frequency dielectric constant tensor elements on the ratio of layer thicknesses were obtained. The results obtained open up the possibility of using spectroscopic data to characterize the structure of superlattices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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