| Autor: |
Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Fateev, N. V. |
| Předmět: |
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| Zdroj: |
Semiconductors; May2024, Vol. 58 Issue 5, p386-392, 7p |
| Abstrakt: |
The optical gain parameters in the six heavily doped AlxGa1 – xN:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (>103 cm–1) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10–15 cm2) and the high density (up to 1020 cm–3) of radiative recombination centers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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