Simulation study on the growth of silicon carbide crystals using iron as a solvent.
| Autor: | Li, Haonan, Wu, Hongjun, Chen, Xiuhua, Ma, Wenhui, Lv, Guoqiang, Mu, Fengwen, Sun, Zhaorui, Li, Shaoyuan, Sun, Huizhen, Fu, Kaixin |
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| Zdroj: | Journal of Physics: Conference Series; 2024, Vol. 2840 Issue 1, p1-9, 9p |
| Databáze: | Complementary Index |
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