| Autor: |
Li, Siqi, Liang, Xiao, Shao, Pengfei, Chen, Songlin, Li, Zhenhua, Su, Xujun, Tao, Tao, Xie, Zili, Khan, M. Ajmal, Wang, Li, Lin, T. T., Hirayama, Hideki, Liu, Bin, Chen, Dunjun, Wang, Ke, Zhang, Rong |
| Zdroj: |
Applied Physics Letters; 9/9/2024, Vol. 125 Issue 11, p1-8, 8p |
| Abstrakt: |
The efficiency of usual AlGaN based deep ultraviolet light-emitting devices is still quite low. The difficulties are basically originated from the fundamental material properties of AlGaN. This work has adopted monolayer-scale (AlN)m/(GaN)n ordered digital alloys (DAs) as alternatives to AlGaN random alloys, m and n are the numbers of monolayers. X-ray diffraction scans have demonstrated clear satellite peaks, verifying good periodicity of AlN/GaN DAs grown by molecular beam epitaxy (MBE), and transmission electron microscopy results have revealed atomically sharp and smooth interfaces and quite precise m:n values agreeing well with designs. The electron densities of Si-doped (AlN)m/(GaN)n DAs with high equivalent Al compositions are significantly higher than those of conventional AlGaN:Si random alloys grown in the same MBE system. Si dopant ionization energies in DAs are only 2–5 meV, much lower than that for usual random alloys. The red shift of the light emission for DAs with thinner AlN barriers has suggested strong coupling between the GaN wells and thus formation of a miniband in a vertical direction. The results have demonstrated the potential of the (AlN)m/(GaN)n DAs as electronically functional alternatives for various device applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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