| Autor: |
Shen, Yuxuan, Zhang, Meng, He, Siyuan, Bian, Le, Liu, Jiaxin, Chen, Zhengyu, Xue, Shuangmei, Zhou, Ye, Yan, Yan |
| Zdroj: |
Journal of Materials Chemistry C; 9/21/2024, Vol. 12 Issue 35, p13707-13726, 20p |
| Abstrakt: |
Amorphous oxide semiconductors (AOSs) are non-crystalline compounds composed of metal elements and oxygen elements, possessing distinctive electrical properties. Even in their amorphous state, these materials exhibit favourable carrier transport paths and demonstrate high mobilities. Thin-film transistors (TFTs), as the core devices in active matrix drive systems, have found commercial success in active matrix liquid crystal displays and active matrix organic light-emitting diode displays. Among the choices of active layer materials for TFTs, AOSs have emerged as a potent alternative to traditional Si-based semiconductors, offering irreplaceable advantages in large-area high-definition flat-panel displays. Currently, the reliability concerns regarding AOS TFTs have garnered increasing attention, yet reports on this topic are scattered. Therefore, a comprehensive overview of the aspects is necessary to facilitate further progress in this field. With next-generation display technologies demanding large-area, high-resolution, and high-refresh-rate displays, alongside the challenges presented by future flexible display technologies in coping with complex working scenarios such as bending and stretching, the significance of this research is unmistakable. Critical directions for future research are proposed in an updated, top-tier roadmap to galvanize progress towards AOS TFTs within the community. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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