Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation.

Autor: Panda, Sridhar, Parida, Rajat Subhra, Dora, G Chiranjibi, Swain, Raghunandan, Panigrahy, Asisa Kumar, Aduri, Kishore Reddy, Suresh, M.
Zdroj: Transactions on Electrical & Electronic Materials; Oct2024, Vol. 25 Issue 5, p600-607, 8p
Databáze: Complementary Index
Externí odkaz: