| Autor: |
Tercero, Jomar U., Isobe, Michiro, Karahashi, Kazuhiro, Vasquez Jr., Magdaleno R., Hamaguchi, Satoshi |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Sep2024, Vol. 42 Issue 5, p1-14, 14p |
| Abstrakt: |
Possible mechanisms of etch-stops in plasma-enhanced atomic layer etching (PE-ALE) for silicon nitride (SiN) were examined with molecular dynamics (MD) simulations. Recent experiments [Hirata et al., J. Vac. Sci. Technol. A 38, 062601 (2020)] have shown that the PE-ALE process of SiN consisting of hydro-fluorocarbon (HFC) adsorption and argon ion (A r + ) irradiation can lead to an etch-stop. The MD simulations have revealed that carbon (C) remnants at the end of a PE-ALE cycle can enhance further accumulation of C in the subsequent cycle. Under typical A r + ion irradiation conditions, nitrogen (N) atoms are preferentially removed from the surface over silicon (Si) atoms, and therefore, the SiN surface becomes more Si rich, which also promotes C accumulation by the formation of Si–C bonds. It is also seen that fluorine atoms contribute to the removal of Si, whereas hydrogen and C atoms contribute to the removal of N from the SiN surface. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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