| Autor: |
Kim, Ji-Hoon, Yoon, Min-Young, Kim, Gwan, Kwon, Deuk-Chul, Lee, Hyo-Chang, Kim, Jung-Hyung, Choe, Hee-Hwan |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/7/2024, Vol. 136 Issue 9, p1-16, 16p |
| Abstrakt: |
In thin film deposition, Ar/SiH4 mixtures are widely used to make polysilicon (poly-Si) and hydrogenated amorphous silicon (a-SiH) layers. Despite extensive research conducted on this mixture, little research has focused on the variations in plasma properties, radicals, and ions that occur during plasma discharge in inductively coupled plasma (ICP) equipment compared to capacitive coupled plasma equipment. In this paper, we investigate the properties of the plasma generated through mathematical modeling of Ar/SiH4 inductive coupled plasma discharge by using the electron energy distribution function (EEDF) obtained by solving the Boltzmann equation. We closely examine the variation in plasma properties and the correlation of plasma variables by controlling the radio frequency power and gas pressure during the process conditions. The Boltzmann equation was computed by assuming the two-term approximation, resulting in a Druyvesteyn-like EEDF due to the high-pressure conditions. To validate the simulation model, the 2D simulation results were compared with probe measurements performed in a two-turn ICP chamber. The results demonstrated encouraging agreement with the measured data. This research not only enhances our comprehension of the discharge characteristics but also establishes a framework for optimizing the discharge conditions to enhance the process and effectively regulate external variables. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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