| Abstrakt: |
Indium oxide and doped indium oxide films were successfully grown utilizing a plasma-enhanced atomic layer deposition supercycling process, which was found to be an effective means of controlling films' composition and, hence, their properties. Using trimethylindium and oxygen plasma as an indium precursor and a co-reactant, respectively, a growth rate of approximately 1.26 Å per cycle was obtained based on thickness measurements by spectroscopic ellipsometry. Three distinct dopants, Sn, Ti, and Mo, have been incorporated into indium oxide. The effects of dopant type, cycle ratio of dopant to indium oxide, and thermal annealing on the structural, electrical, and optical properties were studied. The deposited films consisted of polycrystalline columnar grains perpendicular to the substrate with a cubic bixbyite structure and [111] as the favored growth direction. Thermal annealing had a significant effect on the film characteristics, resulting in an order of magnitude reduction in resistivity, as well as changes in transmittance in the near-infrared (NIR) and ultraviolet (UV) regions. The lowest resistivities achieved for Sn-doped, Ti-doped, and Mo-doped were 2.8 × 10−4, 4.2 × 10−4, and 6.1 × 10−4 Ω cm, respectively. The changes are attributed to dopant activation, as the UV shift between the differently doped samples may be linked to the Moss–Burstein effect and the NIR behavior can be explained by an increase in charge carrier density, as predicted by the Drude model. The three dopants primarily provide a trade-off between electrical resistance and NIR transparency. Mo-doped films exhibited the highest near-infrared transparency, while Sn-doped films offered the lowest sheet resistance. [ABSTRACT FROM AUTHOR] |
