| Autor: |
Zhukavin, R. Kh., Tsyplenkov, V. V., Kovalevsky, K. A., Astrov, Yu. A., Lodygin, A. N., Shuman, V. B., Portsel, L. M., Abrosimov, N. V., Shastin, V. N. |
| Předmět: |
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| Zdroj: |
Semiconductors; Jan2024, Vol. 58 Issue 1, p86-90, 5p |
| Abstrakt: |
Experimental results on the observation of terahertz luminescence under optical excitation of silicon doped with neutral helium-like magnesium donors under photoionization conditions under uniaxial stress are presented. Possible options for creating stimulated radiation sources based on Si:Mg under optical excitation are considered. The possibility of obtaining inversion at the lowest odd level and significant gain coefficients is difficult due to the rather short relaxation time of the 2p0 level. The possibility of using an alternative inversion mechanism presupposes knowledge of relaxation routes. The mechanism of stimulated Raman scattering is theoretically considered and it is shown that terahertz stimulated radiation with optical excitation of double magnesium donors in silicon can be achieved using the mechanism of electronic-type Raman scattering. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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