| Autor: |
Benker, Michael, Gu, Guiru, Senckowski, Alexander Z., Xiang, Boyang, Dwyer, Charles H., Adams, Robert J., Xie, Yuanchang, Nagarajan, Ramaswamy, Li, Yifei, Lu, Xuejun |
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| Zdroj: |
Micromachines; Aug2024, Vol. 15 Issue 8, p941, 12p |
| Abstrakt: |
Highly sensitive infrared photodetectors are needed in numerous sensing and imaging applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche photodiodes (APDs) capable of operating at room temperature (RT). To extend the detection wavelength, the e-SWIR APD utilizes a higher indium (In) composition, specifically In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures. The detection cut-off wavelength is successfully extended to 2.6 µm at RT, as verified by the Fourier Transform Infrared Spectrometer (FTIR) detection spectrum measurement at RT. The In0.3Ga0.7As0.25Sb0.75/GaSb heterostructures are lattice-matched to GaSb substrates, ensuring high material quality. The noise current at RT is analyzed and found to be the shot noise-limited at RT. The e-SWIR APD achieves a high multiplication gain of M ~ 190 at a low bias of V b i a s = − 2.5 V under illumination of a distributed feedback laser (DFB) with an emission wavelength of 2.3 µm. A high photoresponsivity of R > 140 A / W is also achieved at the low bias of V b i a s = − 2.5 V . This type of highly sensitive e-SWIR APD, with a high internal gain capable of RT operation, provides enabling technology for e-SWIR sensing and imaging while significantly reducing size, weight, and power consumption (SWaP). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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