| Autor: |
Aralbayeva, Gulnara, Sarsekhan, Gulnaz, Akylbekova, Aiman, Vlasukova, Liudmila A., Baimukhanov, Zein, Yuvchenko, Vera, Bazarbek, Assyl-Dastan, Dauletbekova, Alma, Kabdrakhimova, Gaukhar, Akilbekov, Abdirash T. |
| Předmět: |
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| Zdroj: |
Crystals (2073-4352); Aug2024, Vol. 14 Issue 8, p730, 13p |
| Abstrakt: |
We report the effect of high-temperature treatment on the structure and photoluminescence of zinc selenite nanocrystals (ZnSeO3) deposited into SiO2/Si track templates. The templates were formed via irradiation with Xe ions (200 MeV, 108 ions/cm2) followed by etching in HF solution. ZnSeO3 nanocrystals were obtained via chemical deposition from the aqueous solution of ZnCl2 and SeO2 as Zn-, Se- and O-precursors. To estimate the thermal stability of the deposited precipitates, heat treatment was carried out at 800 and 1000 °C for 60 min in a vacuum environment. Scanning electron microscopy (SEM), X-ray diffractometry (XRD), photoluminescence (PL) spectroscopy, and electrical measurements were used for the characterization of ZnSeO3/SiO2nanoporous/Si nanocomposites. Thermal treatment of the synthesized nanocomposites resulted in structural transformations with the formation of ZnSe and ZnO phases while the content of the ZnSeO3 phase decreased. For the as-deposited and annealed precipitates, an emission in the range of (400 to 600) nm was observed. PL spectra were approximated by four Gaussian curves with maxima at ~550 nm (2.2 eV), 488 nm (2.54 eV), ~440 nm (2.82 eV), and 410 nm (3.03 eV). Annealing resulted in a decrease in PL intensity that was possibly due to the weight loss of the deposited substance during high-temperature treatment. The redistribution of maxima intensities after annealing was also observed with an increase in blue and violet emissions. The origin of the observed PL is discussed. The I–V curve analysis revealed an electronic type of conductivity for the ZnSeO3(NCs)/SiO2nanoporous/Si structure. The values of the specific conductivity were calculated within the percolation model. The sample annealed at 800 °C showed the highest specific conductivity of 8.5 × 10−6 Ohm−1·cm−1. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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