| Autor: |
Jain, F., Gudlavalleti, R. H., Chandy, J., Heller, E. |
| Předmět: |
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| Zdroj: |
International Journal of High Speed Electronics & Systems; Jun-Sep2024, Vol. 33 Issue 2/3, p1-10, 10p |
| Abstrakt: |
This paper presents quantum dot channel (QDC) FETs in quantum wire and coupled quantum dot configurations for cryogenic operation with multi-state operation. It also describes gate-all-around (GAA) quantum dot channel (QDC) FETs that exhibit potential multi-state characteristics at room temperature. FETs with cladded Si and Ge quantum dot layers as a transport channel have been fabricated. The formation of a quantum dot superlattice (QDSL) when SiOx-cladded Si and/or GeOx-cladded Ge quantum dots (QD) are assembled results in mini-energy sub-bands in the conduction and valence band. The intra-mini-energy band transitions results in significant changes in the drain current when gate and/or drain voltages are varied. This novel feature provides a pathway for 16-/32-state logic in CMOS-X configuration. The gate-defined Si quantum dot FETs, comprising of tunnel barrier coupled, have been reported for quantum computing at cryogenic temperatures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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