| Autor: |
Khan, B., Saman, B., Almalki, A., Gudlavalleti, R. H., Chandy, J., Heller, E., Jain, F. C. |
| Předmět: |
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| Zdroj: |
International Journal of High Speed Electronics & Systems; Jun-Sep2024, Vol. 33 Issue 2/3, p1-5, 5p |
| Abstrakt: |
This paper describes fabrication of Quantum Dot Gate n-FETs using SiOx-cladded Si quantum dot self-assembled on the tunnel gate oxide. Experimental I-V characteristics exhibiting 4-states are presented. Simulation is presented for the operation of viable 4-state SRAMs using QDG-FETs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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