| Autor: |
Cao, Haicheng, Nong, Mingtao, Li, Jiaqiang, Tang, Xiao, Liu, Tingang, Liu, Zhiyuan, Sarkar, Biplab, Lai, Zhiping, Wu, Ying, Li, Xiaohang |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/19/2024, Vol. 125 Issue 8, p1-4, 4p |
| Abstrakt: |
Ultrawide bandgap aluminum nitride (AlN) stands out as a highly attractive material for high-power electronics. However, AlN power devices face performance challenges due to high contact resistivity exceeding 10−1 Ω cm2. In this Letter, we demonstrate achieving a low contact resistivity at the 10−4 Ω cm2 level via refined metallization processes applied directly to n-AlN. The minimum contact resistivity reached 5.82 × 10−4 Ω cm2. Our analysis reveals that the low contact resistance primarily results from the stable TiAlTi/AlN interface, resilient even under rigorous annealing conditions, which beneficially forms a thin Al–Ti–N interlayer, promotes substantial nitrogen vacancies, enhances the net carrier density at the interface, and lowers the contact barrier. This work marks a significant milestone in realizing superior Ohmic contacts for n-type AlN, paving the way for more efficient power electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
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