Trap Assessment and Mobility Simulation of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors.
Autor: | Mattsson, Måns Johannes, Parker, Jared, Wager, John F, Graham, Matt Werden |
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Zdroj: | ECS Meeting Abstracts; 2024, Vol. MA2024-01 Issue 1, p1565-1565, 1p |
Databáze: | Complementary Index |
Externí odkaz: |