Trap Assessment and Mobility Simulation of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors.

Autor: Mattsson, Måns Johannes, Parker, Jared, Wager, John F, Graham, Matt Werden
Zdroj: ECS Meeting Abstracts; 2024, Vol. MA2024-01 Issue 1, p1565-1565, 1p
Databáze: Complementary Index