The electronic transport properties of CrSi2/Si98B2 composite: The mid to low temperature applications.

Autor: Yadav, Manju, Muthiah, Saravanan, Gahtori, Bhasker, Upadhyay, Naval Kishor, Shyam, Radhey, Dhakate, S. R.
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Zdroj: AIP Conference Proceedings; 2024, Vol. 3149 Issue 1, p1-6, 6p
Abstrakt: For power generation applications in the mid temperature range, Chromium disilicide is turning out to be a potential p-type thermoelectric material for utilizing the waste heat. In the present work, CrSi2/Si98B2 nanocomposite samples were synthesized using spark plasma sintering by dispersing ball-milled nanoparticles of Si98B2 with arc melted CrSi2. The phases of the synthesized composites were identified by using X-ray diffraction. The surface morphology was examined with field emission scanning electron microscopy. The inclusion of Si98B2 nanoparticles into the CrSi2 matrix significantly enhances the power factor of CrSi2/ 2 wt% Si98B2 nanocomposite to ∼ 2.36 x 10−3 W/mK2 at room temperature (323 K). However, for pristine CrSi2 the power factor peak was obtained at 423 K and it is ∼ 1.4 x 10−3 W/mK2. Here, the maximum power factor point shifted from mid temperature regime to low temperature regime which can be due to the optimization of charge carriers and mobility on dispersing 2 wt% Si98B2 into the CrSi2 matrix. As a result, the CrSi2 based thermoelectric materials can be used in low temperature applications. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index