| Autor: |
Farrakhov, B. F., Fattakhov, Ya. V., Stepanov, A. L. |
| Zdroj: |
Bulletin of the Russian Academy of Sciences: Physics; Jul2024, Vol. 88 Issue 7, p1122-1125, 4p |
| Abstrakt: |
A study was made of the possibility of modifying the near-surface silicon layer before and after ion implantation, followed by pulsed light annealing, to structure the surface of the substrates to increase the efficiency of their use in solar energy. The results were compared with the data obtained on monocrystalline and implanted germanium. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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