Autor: |
Ledo Pereda, L. M., Semenov, V. N., Rikhvitsky, V. S., Likhachev, A. N., Isaev, R. Sh., Chepurchenko, I. A., Doroshkevich, A. S., Alexandrov, V. A. |
Zdroj: |
Physics of Particles & Nuclei Letters; Aug2024, Vol. 21 Issue 4, p938-945, 8p |
Abstrakt: |
A proton beam scanning system for silicon sample irradiation has been developed in the frame of the EG-5 accelerator upgrade project and joint work with Micron JSC and Angstrom JSC located in Zelenograd. Together with employees of SPE ESTO JSC (Zelenograd), an automated system has been developed, produced, and tested on the basis of the EG-5 electrostatic accelerator to carry out the technological operation of ion implantation of silicon wafers for the production of power electronics. The developed system is an experimental platform that allows varying the distribution of the sample surface coating during scanning with accelerated particles. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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