| Autor: |
Bommali, R. K., Kumar, Rajesh, Gupta, H., Topwal, D., Ghosh, S., Srivastava, P. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2024, Vol. 3196 Issue 1, p1-5, 5p |
| Abstrakt: |
Ion implantation was employed for the growth of embedded silver nanoparticles (NPs) in amorphous hydrogenated silicon nitride (a-SiNx:H) thin films. Crystalline nanoparticles are found to grow in the as-implanted samples without the requirement of an annealing step. The NPs exhibit absorption due to Localized Surface Plasmon Resonance (LSPR). The LSPR peak position, width and intensity, are found depend on the stoichiometry of a-SiNx:H and the implantation energy. A maximum LSPR red shift from 390 nm to 470 nm was obtained with changes in the composition of the host medium. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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