| Autor: |
Jaiswal, Shivendra Kumar, Patel, Abhilash, Jaiswal, Dev P. |
| Předmět: |
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| Zdroj: |
Procedia-Environmental Science, Engineering & Management; 2023, Vol. 10 Issue 1, p20-24, 5p |
| Abstrakt: |
The effects of silver ions being irradiated on a gallium oxide (Ga2O3) thin film that has been proposed to be deposited on a sapphire substrate are examined in this article. For pristine and irradiated samples, the transmittance and Tauc's graphs are plotted. The proposed approach has a significant impact on the transmittance and band gap of the presented samples. The transmittance decreases concerning pristine for low irradiation time (Τ = 16 s) whereas increases for high irradiation time (Τ = 80 s), for the proposed substrate. For pristine samples, the obtained band gap is 5.18 eV. An adjustable high pass filter made of Ga2O3 on sapphire is possible. Based on obtained results, Ga2O3 on sapphire seems to be promising in producing high-quality solar cells and photo-detectors, and various optoelectronic devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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