Investigation of Analog/RF behaviour of Asymmetrical Gate Tunnel FET at Cryogenic temperatures.
Autor: | Misra, Sinjini, Bose, Chandreyee, Ghosh, Rittik, Saha, Priyanka |
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Zdroj: | SILICON (1876990X); Jul2024, Vol. 16 Issue 11, p4753-4762, 10p |
Abstrakt: | This paper extensively sheds light on the performance of an Asymmetrical-gate Tunnel FET (A-TFET) under cryogenic temperatures (< 78 K) in terms of DC, Analog, and RF metrics. SILVACO ATLAS TCAD is implemented to invoke the device physics and subsequently characterize the lattice temperature parameters for facilitating the carrier transport in terms of device transfer characteristics, I |
Databáze: | Complementary Index |
Externí odkaz: |
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