Clean SiO2 atomic layer etching based on physisorption of high boiling point perfluorocarbon.
| Autor: | Sung, Dain, Tak, Hyunwoo, Kim, Heeju, Kim, Dongwoo, Kim, Kyongnam, Yeom, Geunyoung |
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| Zdroj: | Nanoscale; 8/14/2024, Vol. 16 Issue 30, p14433-14440, 8p |
| Databáze: | Complementary Index |
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