| Autor: |
Uzuhashi, Jun, Chen, Jun, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Ohkubo, Tadakatsu, Sekiguchi, Takashi |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-7, 7p |
| Abstrakt: |
An area-selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conventional post-implantation annealing forms considerable defects in the GaN, resulting in extremely low activation efficiency. The recent invention of ultrahigh-pressure annealing (UHPA) has substantially improved the p-type activation efficiency; however, the UHPA causes an unexpected Mg diffusion. Thus, both annealing processes resulted in a much lower Mg concentration in the GaN matrix than the Mg dose. In this study, the effect of a sequential N I/I for p-type Mg-implanted GaN was investigated by the correlative cathodoluminescence, transfer length method, scanning transmission electron microscopy, and atom probe tomography (APT) analyses. APT results have revealed that the sequential N I/I can successfully maintain the Mg concentration in the GaN matrix in the higher range of 1018 cm−3 or more. Our investigation suggests that sequential N I/I is a promising technique to maintain the Mg concentration higher and improve the p-type activation efficiency. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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