| Autor: |
Inaba, T., Xu, X., Omi, H., Yamamoto, H., Tawara, T., Sanada, H. |
| Předmět: |
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| Zdroj: |
CrystEngComm; 8/21/2024, Vol. 26 Issue 31, p4190-4194, 5p |
| Abstrakt: |
We developed a growth technique that improves the crystallinity and optical properties (photoluminescence intensity and lifetime) of Er-doped Gd2O3 (Er:Gd2O3) on a Si(111) substrate. Deposition of thin (7.5 Å thick) Gd metal on the SiOx-covered surface of the Si(111) substrate prior to the growth of Er:Gd2O3, and the successive, thermally-induced redox reaction gives rise to the solid-phase epitaxy of GdOx on Si, which protects Si from unintentional oxidation and fosters the epitaxial growth of Er:Gd2O3 on it; i.e., GdOx serves as a protection and seed (bifunctional) layer. This technique is promising for developing high-performance optical devices using high-quality rare-earth oxide films grown on Si substrates. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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